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Isc N-Channel MOSFET Transistor INCHANGE Semiconductor TK80A04K3L，ITK80A04K3L ·FEATURES ·Low drain-source on-resistance: RDS(ON) = 2.4mΩ (typ.) (VGS = 10 V) ·Enhancement mode: Vth = 2.0 to 3.0V (VDS = 10 V, ID=1mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regu.
·Low drain-source on-resistance:
RDS(ON) = 2.4mΩ (typ.) (VGS = 10 V)
·Enhancement mode:
Vth = 2.0 to 3.0V (VDS = 10 V, ID=1mA)
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION
·Switching Voltage Regulators
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
40
VGS
Gate-Source Voltage
±20
ID
Drain Current-Continuous
80
IDM
Drain Current-Single Pulsed
320
PD
Total Dissipation @TC=25℃
48
Tj
Max. Operating Junction Temperature
175
Tstg
Storage Temperature
-55~175
UNIT V V.
TK80A04K3L - Toshiba Semiconductor
TK80A04K3L MOSFETs Silicon N-channel MOS (U-MOS) TK80A04K3L 1. Applications • • • Automotive Switching Voltage Regulat.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | TK80A08K3 |
Toshiba Semiconductor |
Field Effect Transistor |
|
| 2 | TK8011 |
Tenx |
1 key touch detector |
|
| 3 | TK8012 |
Tenx |
2 key touch detector |
|
| 4 | TK8021 |
Tenx |
1 key touch detector |
|
| 5 | TK8022 |
Tenx |
2 key touch detector |
|
| 6 | TK8023 |
Tenx |
3 key touch detector |
|
| 7 | TK80D08K3 |
Toshiba Semiconductor |
Switching Regulator Applications |
|
| 8 | TK80E06K3A |
Toshiba |
Silicon N-channel MOS |
|
| 9 | TK80E07NE |
Toshiba |
Silicon N Channel MOS Type Field Effect Transistor |
|
| 10 | TK80E08K3 |
Toshiba |
N-Channel MOSFET |
|
| 11 | TK80F04K3L |
Toshiba |
Silicon N-channel MOS |
|
| 12 | TK80F06K3L |
Toshiba |
Silicon N-channel MOS |
|