TK80D08K3 - Toshiba Semiconductor

TK80D08K3 Switching Regulator Applications

TK80D08K3 www.DataSheet4U.com TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSⅣ) TK80D08K3 Switching Regulator Applications • • • • Low drain-source ON-resistance: RDS (ON) = 3.6 mΩ (typ.) High forward transfer admittance: |Yfs| = 200 S Low leakage current: IDSS = 10 μA (max) (VDS = 75 V) Enhancement-mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID.

Features

1: Gate 2: Drain (Heat Sink) 3: Source 4.5±0.2 2.54 2.54 2.53±0.2 JEDEC JEITA TOSHIBA ⎯ ⎯ 2-10V1A Weight: 1.35 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/.