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TK80E07NE TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U−MOS -H) TK80E07NE E-Bike/UPS/Inverter Unit: mm Note : This product is designed for E-Bike / UPS / Inverter in China / India market. z Low drain−source on-resistance : RDS(ON) = 6.9 mΩ (typ.) z Low leakage current : IDSS = 10 µA (max) (VDS = 70 V) z Enhancement mode : Vth = 2.0.
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| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | TK80E06K3A |
Toshiba |
Silicon N-channel MOS |
|
| 2 | TK80E08K3 |
Toshiba |
N-Channel MOSFET |
|
| 3 | TK8011 |
Tenx |
1 key touch detector |
|
| 4 | TK8012 |
Tenx |
2 key touch detector |
|
| 5 | TK8021 |
Tenx |
1 key touch detector |
|
| 6 | TK8022 |
Tenx |
2 key touch detector |
|
| 7 | TK8023 |
Tenx |
3 key touch detector |
|
| 8 | TK80A04K3L |
Toshiba Semiconductor |
MOSFETs |
|
| 9 | TK80A04K3L |
INCHANGE |
N-Channel MOSFET |
|
| 10 | TK80A08K3 |
Toshiba Semiconductor |
Field Effect Transistor |
|
| 11 | TK80D08K3 |
Toshiba Semiconductor |
Switching Regulator Applications |
|
| 12 | TK80F04K3L |
Toshiba |
Silicon N-channel MOS |
|