TK80F06K3L MOSFETs Silicon N-channel MOS (U-MOS) TK80F06K3L 1. Applications • • • • Automotive Switching Voltage Regulators DC-DC Converters Motor Drivers 2. Features (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 6.2 mΩ (typ.) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V) Enhancement mode: Vth = 2.0 to 3.0 V (VDS = 10 V, ID = 1.
(1) (2) (3) Low drain-source on-resistance: RDS(ON) = 6.2 mΩ (typ.) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V) Enhancement mode: Vth = 2.0 to 3.0 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit 1: Gate 2: Drain (Heatsink) 3: Source TO-220SM(W) 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Drain-source voltage Gate-source voltage Drain current (DC) Drain current (pulsed) Power dissipation Single-pulse avalanche energy Avalanche current Channel temperature Storage temperature (Note 3) (Note 3) (Tc = 25) (Note 2) (.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | TK80F04K3L |
Toshiba |
Silicon N-channel MOS | |
2 | TK80F08K3 |
Toshiba |
Silicon N-Channel MOSFET | |
3 | TK8011 |
Tenx |
1 key touch detector | |
4 | TK8012 |
Tenx |
2 key touch detector | |
5 | TK8021 |
Tenx |
1 key touch detector | |
6 | TK8022 |
Tenx |
2 key touch detector | |
7 | TK8023 |
Tenx |
3 key touch detector | |
8 | TK80A04K3L |
Toshiba Semiconductor |
MOSFETs | |
9 | TK80A04K3L |
INCHANGE |
N-Channel MOSFET | |
10 | TK80A08K3 |
Toshiba Semiconductor |
Field Effect Transistor | |
11 | TK80D08K3 |
Toshiba Semiconductor |
Switching Regulator Applications | |
12 | TK80E06K3A |
Toshiba |
Silicon N-channel MOS |