TK80F06K3L |
Part Number | TK80F06K3L |
Manufacturer | Toshiba (https://www.toshiba.com/) |
Description | TK80F06K3L MOSFETs Silicon N-channel MOS (U-MOS) TK80F06K3L 1. Applications • • • • Automotive Switching Voltage Regulators DC-DC Converters Motor Drivers 2. Features (1) (2) (3) Low drain-source o... |
Features |
(1) (2) (3) Low drain-source on-resistance: RDS(ON) = 6.2 mΩ (typ.) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V) Enhancement mode: Vth = 2.0 to 3.0 V (VDS = 10 V, ID = 1 mA)
3. Packaging and Internal Circuit
1: Gate 2: Drain (Heatsink) 3: Source
TO-220SM(W)
4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified)
Characteristics Drain-source voltage Gate-source voltage Drain current (DC) Drain current (pulsed) Power dissipation Single-pulse avalanche energy Avalanche current Channel temperature Storage temperature (Note 3) (Note 3) (Tc = 25) (Note 2) (... |
Document |
TK80F06K3L Data Sheet
PDF 311.35KB |
Distributor | Stock | Price | Buy |
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No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | TK80F04K3L |
Toshiba |
Silicon N-channel MOS | |
2 | TK80F08K3 |
Toshiba |
Silicon N-Channel MOSFET | |
3 | TK8011 |
Tenx |
1 key touch detector | |
4 | TK8012 |
Tenx |
2 key touch detector | |
5 | TK8021 |
Tenx |
1 key touch detector |