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iscN-Channel MOSFET Transistor INCHANGE Semiconductor TK4A60DB，ITK4A60DB ·FEATURES ·Low drain-source on-resistance: RDS(ON) = 1.7Ω (typ.) ·Enhancement mode: Vth = 2.4 to 4.4V (VDS = 10 V, ID=1.0mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regulators ·ABSOLUTE.
·Low drain-source on-resistance:
RDS(ON) = 1.7Ω (typ.)
·Enhancement mode:
Vth = 2.4 to 4.4V (VDS = 10 V, ID=1.0mA)
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION
·Switching Voltage Regulators
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
600
VGS
Gate-Source Voltage
±30
ID
Drain Current-Continuous
3.7
IDM
Drain Current-Single Pulsed
14.8
PD
Total Dissipation @TC=25℃
35
Tj
Max. Operating Junction Temperature
150
Tstg
Storage Temperature
-55~150
UNIT V V A A W ℃ .
TK4A60DB - Toshiba Semiconductor
TK4A60DB TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK4A60DB Switching Regulator Applications .
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | TK4A60D |
Toshiba Semiconductor |
N-Channel MOSFET |
|
| 2 | TK4A60D |
INCHANGE |
N-Channel MOSFET |
|
| 3 | TK4A60DA |
Toshiba |
N-Channel MOSFET |
|
| 4 | TK4A60DA |
INCHANGE |
N-Channel MOSFET |
|
| 5 | TK4A65DA |
Toshiba Semiconductor |
N-Channel MOSFET |
|
| 6 | TK4A |
Topstek |
Current Transducer |
|
| 7 | TK4A50D |
Toshiba Semiconductor |
N-Channel MOSFET |
|
| 8 | TK4A50D |
INCHANGE |
N-Channel MOSFET |
|
| 9 | TK4A53D |
Toshiba Semiconductor |
N-Channel MOSFET |
|
| 10 | TK4A53D |
INCHANGE |
N-Channel MOSFET |
|
| 11 | TK4A55D |
Toshiba Semiconductor |
N-Channel MOSFET |
|
| 12 | TK4A55D |
INCHANGE |
N-Channel MOSFET |
|