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iscN-Channel MOSFET Transistor INCHANGE Semiconductor TK4A50D，ITK4A50D ·FEATURES ·Low drain-source on-resistance: RDS(ON) = 1.7Ω (typ.) ·Enhancement mode: Vth = 2.4 to 4.4V (VDS = 10 V, ID=1.0mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regulators ·ABSOLUTE M.
·Low drain-source on-resistance:
RDS(ON) = 1.7Ω (typ.)
·Enhancement mode:
Vth = 2.4 to 4.4V (VDS = 10 V, ID=1.0mA)
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION
·Switching Voltage Regulators
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
500
VGS
Gate-Source Voltage
±30
ID
Drain Current-Continuous
4
IDM
Drain Current-Single Pulsed
16
PD
Total Dissipation @TC=25℃
30
Tj
Max. Operating Junction Temperature
150
Tstg
Storage Temperature
-55~150
UNIT V V A A W ℃ ℃
·.
TK4A50D - Toshiba Semiconductor
TK4A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK4A50D Switching Regulator Applications • .
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|---|---|---|---|---|
| 1 | TK4A53D |
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| 2 | TK4A53D |
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| 3 | TK4A55D |
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| 4 | TK4A55D |
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| 5 | TK4A55DA |
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| 9 | TK4A60D |
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| 10 | TK4A60DA |
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| 11 | TK4A60DA |
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