www.DataSheet4U.com TK4A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK4A60D Switching Regulator Applications • • • • Low drain-source ON-resistance: RDS (ON) = 1.4 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 2.5 S (typ.) Low leakage current: IDSS = 10 μA (max) (VDS = 600 V) Enhancement mode: Vth = 2.4 to 4.4 V (VDS = 10.
ature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods’’) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics Characteristics Thermal resistance, channel to case Th.
iscN-Channel MOSFET Transistor INCHANGE Semiconductor TK4A60D,ITK4A60D ·FEATURES ·Low drain-source on-resistance: RDS(.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | TK4A60DA |
Toshiba |
N-Channel MOSFET | |
2 | TK4A60DA |
INCHANGE |
N-Channel MOSFET | |
3 | TK4A60DB |
Toshiba Semiconductor |
N-Channel MOSFET | |
4 | TK4A60DB |
INCHANGE |
N-Channel MOSFET | |
5 | TK4A65DA |
Toshiba Semiconductor |
N-Channel MOSFET | |
6 | TK4A |
Topstek |
Current Transducer | |
7 | TK4A50D |
Toshiba Semiconductor |
N-Channel MOSFET | |
8 | TK4A50D |
INCHANGE |
N-Channel MOSFET | |
9 | TK4A53D |
Toshiba Semiconductor |
N-Channel MOSFET | |
10 | TK4A53D |
INCHANGE |
N-Channel MOSFET | |
11 | TK4A55D |
Toshiba Semiconductor |
N-Channel MOSFET | |
12 | TK4A55D |
INCHANGE |
N-Channel MOSFET |