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TK4A60DB |
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| Part Number | TK4A60DB |
| Manufacturer | INCHANGE |
| Description | iscN-Channel MOSFET Transistor INCHANGE Semiconductor TK4A60DB，ITK4A60DB ·FEATURES ·Low drain-source on-resistance: RDS(ON) = 1.7Ω (typ.) ·Enhancement mode: Vth = 2.4 to 4.4V (VDS = 10 V, ID=1.0mA) ... |
| Features |
·Low drain-source on-resistance: RDS(ON) = 1.7Ω (typ.) ·Enhancement mode: Vth = 2.4 to 4.4V (VDS = 10 V, ID=1.0mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regulators ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGS Gate-Source Voltage ±30 ID Drain Current-Continuous 3.7 IDM Drain Current-Single Pulsed 14.8 PD Total Dissipation @TC=25℃ 35 Tj Max. Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ... |
| Document |
 TK4A60DB Data Sheet
PDF 248.47KB |
| Distributor | Stock | Price | Buy |
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