MOSFETs Silicon N-channel MOS (U-MOS-H) TK46A08N1 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 6.9 mΩ (typ.) (VGS = 10 V) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 80 V) (3) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 0.5 mA) 3. Packaging and Internal Circuit TK46A08N1 1: Gate.
(1) Low drain-source on-resistance: RDS(ON) = 6.9 mΩ (typ.) (VGS = 10 V) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 80 V) (3) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 0.5 mA) 3. Packaging and Internal Circuit TK46A08N1 1: Gate 2: Drain 3: Source TO-220SIS 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage VDSS 80 V Gate-source voltage VGSS ±20 Drain current (DC) (Silicon limit) (Note 1), (Note 2) ID 80 A Drain current (DC) (Tc = 25) (Note 1) ID 46 Drain current (pulsed.
Isc N-Channel MOSFET Transistor INCHANGE Semiconductor TK46A08N1,ITK46A08N1 ·FEATURES ·Low drain-source on-resistance:.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | TK46E08N1 |
INCHANGE |
N-Channel MOSFET | |
2 | TK46E08N1 |
Toshiba Semiconductor |
Silicon N-Channel MOSFET | |
3 | TK40A06N1 |
Toshiba Semiconductor |
Silicon N-Channel MOSFET | |
4 | TK40A06N1 |
INCHANGE |
N-Channel MOSFET | |
5 | TK40A08K3 |
Toshiba Semiconductor |
MOSFET | |
6 | TK40A10J1 |
Toshiba Semiconductor |
MOSFET | |
7 | TK40A10K3 |
Toshiba Semiconductor |
Field Effect Transistor | |
8 | TK40A10N1 |
Toshiba Semiconductor |
Silicon N-Channel MOSFET | |
9 | TK40A10N1 |
INCHANGE |
N-Channel MOSFET | |
10 | TK40D10J1 |
Toshiba Semiconductor |
MOSFET | |
11 | TK40E06N1 |
INCHANGE |
N-Channel MOSFET | |
12 | TK40E06N1 |
Toshiba Semiconductor |
Silicon N-Channel MOSFET |