TK46A08N1 |
Part Number | TK46A08N1 |
Manufacturer | Toshiba (https://www.toshiba.com/) Semiconductor |
Description | MOSFETs Silicon N-channel MOS (U-MOS-H) TK46A08N1 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 6.9 mΩ (typ.) (VGS = 10 V) (2) Low leakage c... |
Features |
(1) Low drain-source on-resistance: RDS(ON) = 6.9 mΩ (typ.) (VGS = 10 V) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 80 V) (3) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 0.5 mA)
3. Packaging and Internal Circuit
TK46A08N1
1: Gate 2: Drain 3: Source
TO-220SIS
4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS
80
V
Gate-source voltage
VGSS
±20
Drain current (DC)
(Silicon limit) (Note 1), (Note 2)
ID
80
A
Drain current (DC)
(Tc = 25)
(Note 1)
ID
46
Drain current (pulsed... |
Document |
TK46A08N1 Data Sheet
PDF 235.03KB |
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