TK46A08N1 Toshiba Semiconductor Silicon N-Channel MOSFET Datasheet, en stock, prix

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TK46A08N1

Toshiba Semiconductor
TK46A08N1
TK46A08N1 TK46A08N1
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Part Number TK46A08N1
Manufacturer Toshiba (https://www.toshiba.com/) Semiconductor
Description MOSFETs Silicon N-channel MOS (U-MOS-H) TK46A08N1 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 6.9 mΩ (typ.) (VGS = 10 V) (2) Low leakage c...
Features (1) Low drain-source on-resistance: RDS(ON) = 6.9 mΩ (typ.) (VGS = 10 V) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 80 V) (3) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 0.5 mA) 3. Packaging and Internal Circuit TK46A08N1 1: Gate 2: Drain 3: Source TO-220SIS 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage VDSS 80 V Gate-source voltage VGSS ±20 Drain current (DC) (Silicon limit) (Note 1), (Note 2) ID 80 A Drain current (DC) (Tc = 25) (Note 1) ID 46 Drain current (pulsed...

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