TK31V60W MOSFETs Silicon N-Channel MOS (DTMOS) TK31V60W 1. Applications • Switching Voltage Regulators 2. Features (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 0.078 Ω (typ.) by used to Super Junction Structure : DTMOS Easy to control Gate switching Enhancement mode: Vth = 2.7 to 3.7 V (VDS = 10 V, ID = 1.5 mA) 3. Packaging and Internal Circuit .
(1) (2) (3) Low drain-source on-resistance: RDS(ON) = 0.078 Ω (typ.) by used to Super Junction Structure : DTMOS Easy to control Gate switching Enhancement mode: Vth = 2.7 to 3.7 V (VDS = 10 V, ID = 1.5 mA) 3. Packaging and Internal Circuit 1: Gate 2: Source1 3,4: Source2 5: Drain (Heatsink) Notice: Please use the source1 pin for gate input signal return. Make sure that the main current flows into the source2 pins. DFN8x8 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Drain-source voltage Gate-source voltage Drain current (DC) Drain current (pulsed.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | TK31V60W5 |
Toshiba |
Silicon N-Channel MOSFET | |
2 | TK31V60X |
Toshiba |
Silicon N-Channel MOSFET | |
3 | TK31A60W |
Toshiba |
Silicon N-Channel MOSFET | |
4 | TK31A60W |
INCHANGE |
N-Channel MOSFET | |
5 | TK31E60W |
Toshiba |
Silicon N-Channel MOSFET | |
6 | TK31E60W |
INCHANGE |
N-Channel MOSFET | |
7 | TK31E60X |
Toshiba |
Silicon N-Channel MOSFET | |
8 | TK31J60W |
Toshiba |
Silicon N-Channel MOSFET | |
9 | TK31J60W |
INCHANGE |
N-Channel MOSFET | |
10 | TK31J60W5 |
Toshiba Semiconductor |
Silicon N-Channel MOSFET | |
11 | TK31J60W5 |
INCHANGE |
N-Channel MOSFET | |
12 | TK31N60W |
Toshiba |
Silicon N-Channel MOSFET |