TK31N60W MOSFETs Silicon N-Channel MOS (DTMOS) TK31N60W 1. Applications • Switching Voltage Regulators 2. Features (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 0.073 Ω (typ.) by used to Super Junction Structure : DTMOS Easy to control Gate switching Enhancement mode: Vth = 2.7 to 3.7 V (VDS = 10 V, ID = 1.5 mA) 3. Packaging and Internal Circuit .
(1) (2) (3) Low drain-source on-resistance: RDS(ON) = 0.073 Ω (typ.) by used to Super Junction Structure : DTMOS Easy to control Gate switching Enhancement mode: Vth = 2.7 to 3.7 V (VDS = 10 V, ID = 1.5 mA) 3. Packaging and Internal Circuit 1: Gate 2: Drain (Heatsink) 3: Source TO-247 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Drain-source voltage Gate-source voltage Drain current (DC) Drain current (pulsed) Power dissipation Single-pulse avalanche energy Avalanche current Reverse drain current (DC) Reverse drain current (pulsed) Channel temper.
Isc N-Channel MOSFET Transistor INCHANGE Semiconductor TK31N60W ·FEATURES ·With TO-247 packaging ·Easy to use ·High sp.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | TK31N60W5 |
Toshiba Semiconductor |
Silicon N-Channel MOSFET | |
2 | TK31N60W5 |
INCHANGE |
N-Channel MOSFET | |
3 | TK31N60X |
Toshiba |
Silicon N-Channel MOSFET | |
4 | TK31N60X |
INCHANGE |
N-Channel MOSFET | |
5 | TK31A60W |
Toshiba |
Silicon N-Channel MOSFET | |
6 | TK31A60W |
INCHANGE |
N-Channel MOSFET | |
7 | TK31E60W |
Toshiba |
Silicon N-Channel MOSFET | |
8 | TK31E60W |
INCHANGE |
N-Channel MOSFET | |
9 | TK31E60X |
Toshiba |
Silicon N-Channel MOSFET | |
10 | TK31J60W |
Toshiba |
Silicon N-Channel MOSFET | |
11 | TK31J60W |
INCHANGE |
N-Channel MOSFET | |
12 | TK31J60W5 |
Toshiba Semiconductor |
Silicon N-Channel MOSFET |