TK31V60W |
Part Number | TK31V60W |
Manufacturer | Toshiba (https://www.toshiba.com/) Semiconductor |
Description | TK31V60W MOSFETs Silicon N-Channel MOS (DTMOS) TK31V60W 1. Applications • Switching Voltage Regulators 2. Features (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 0.078 Ω (typ.) by used to Su... |
Features |
(1) (2) (3) Low drain-source on-resistance: RDS(ON) = 0.078 Ω (typ.) by used to Super Junction Structure : DTMOS Easy to control Gate switching Enhancement mode: Vth = 2.7 to 3.7 V (VDS = 10 V, ID = 1.5 mA)
3. Packaging and Internal Circuit
1: Gate 2: Source1 3,4: Source2 5: Drain (Heatsink) Notice: Please use the source1 pin for gate input signal return. Make sure that the main current flows into the source2 pins.
DFN8x8
4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified)
Characteristics Drain-source voltage Gate-source voltage Drain current (DC) Drain current (pulsed... |
Document |
TK31V60W Data Sheet
PDF 241.00KB |
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