TK31N60W |
Part Number | TK31N60W |
Manufacturer | INCHANGE |
Description | Isc N-Channel MOSFET Transistor INCHANGE Semiconductor TK31N60W ·FEATURES ·With TO-247 packaging ·Easy to use ·High speed switching ·Very high commutation ruggedness ·100% avalanche tested ·Minimum ... |
Features |
·With TO-247 packaging ·Easy to use ·High speed switching ·Very high commutation ruggedness ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·PFC stages ·LCD & PDP TV ·Power supply ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGSS Gate-Source Voltage ±30 ID Drain Current-Continuous 30.8 IDM Drain Current-Single Pulsed 123 PD Total Dissipation 230 Tch Max. Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V ... |
Document |
TK31N60W Data Sheet
PDF 208.94KB |
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