TK31N60W5 - Toshiba Semiconductor

TK31N60W5 Silicon N-Channel MOSFET

TK31N60W5 MOSFETs Silicon N-Channel MOS (DTMOS) TK31N60W5 1. Applications • Switching Voltage Regulators 2. Features (1) (2) (3) (4) Fast reverse recovery time: trr = 135 ns (typ.) Low drain-source on-resistance: RDS(ON) = 0.082 Ω (typ.) by used to Super Junction Structure : DTMOS Easy to control Gate switching Enhancement mode: Vth = 3 to 4.5 V (VDS = 10.

Features

(1) (2) (3) (4) Fast reverse recovery time: trr = 135 ns (typ.) Low drain-source on-resistance: RDS(ON) = 0.082 Ω (typ.) by used to Super Junction Structure : DTMOS Easy to control Gate switching Enhancement mode: Vth = 3 to 4.5 V (VDS = 10 V, ID = 1.5 mA) 3. Packaging and Internal Circuit 1: Gate 2: Drain (Heatsink) 3: Source TO-247 Start of commercial production 1 2013-10 2014-02-25 Rev.2.0 TK31N60W5 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Drain-source voltage Gate-source voltage Drain current (DC) Drain current (pulsed) Power dissipati.