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TK31J60W |
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| Part Number | TK31J60W |
| Manufacturer | INCHANGE |
| Description | isc N-Channel MOSFET Transistor TK31J60W ·FEATURES ·Low drain-source on-resistance: RDS(on) ≤0.088Ω. ·Enhancement mode: Vth =2.7 to 3.7V (VDS = 10 V, ID=15.4A) ·100% avalanche tested ·Minimum Lot-to... |
| Features |
·Low drain-source on-resistance: RDS(on) ≤0.088Ω. ·Enhancement mode: Vth =2.7 to 3.7V (VDS = 10 V, ID=15.4A) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regulators ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage ±30 V ID Drain Current-Continuous 30.8 A IDM Drain Current-Single Pulsed 123 A PD Total Dissipation @TC=25℃ 230 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150... |
| Document |
 TK31J60W Data Sheet
PDF 265.33KB |
| Distributor | Stock | Price | Buy |
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