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iscN-Channel MOSFET Transistor TK13A55DA ·FEATURES ·Low drain-source on-resistance: RDS(ON) = 480mΩ (MAX) ·Enhancement mode: Vth = 2.0 to 4.0V (VDS = 10 V, ID=1.0mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regulators ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL.
·Low drain-source on-resistance:
RDS(ON) = 480mΩ (MAX)
·Enhancement mode:
Vth = 2.0 to 4.0V (VDS = 10 V, ID=1.0mA)
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION
·Switching Voltage Regulators
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
550
V
VGS
Gate-Source Voltage
±30
V
ID
Drain Current-Continuous
12.5
A
IDM
Drain Current-Single Pulsed
50
A
PD
Total Dissipation @TC=25℃
45
W
Tj
Max. Operating Junction Temperature
150
℃
Tstg
Storage Temperature
-55.
TK13A55DA - Toshiba Semiconductor
TK13A55DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK13A55DA Switching Regulator Application.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | TK13A50D |
Toshiba |
Silicon N-Channel MOSFET |
|
| 2 | TK13A50DA |
Toshiba Semiconductor |
N-Channel MOSFET |
|
| 3 | TK13A50DA |
INCHANGE |
N-Channel MOSFET |
|
| 4 | TK13A25D |
Toshiba Semiconductor |
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|
| 5 | TK13A25D |
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| 6 | TK13A45D |
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| 7 | TK13A45D |
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| 8 | TK13A60D |
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| 9 | TK13A60D |
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| 10 | TK13A60W |
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| 11 | TK13A65D |
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| 12 | TK13A65D |
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|