MOSFETs Silicon N-channel MOS (U-MOS-H) TK100A10N1 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 3.1 mΩ (typ.) (VGS = 10 V) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 100 V) (3) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1.0 mA) 3. Packaging and Internal Circuit TK100A10N1 1: G.
(1) Low drain-source on-resistance: RDS(ON) = 3.1 mΩ (typ.) (VGS = 10 V) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 100 V) (3) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1.0 mA) 3. Packaging and Internal Circuit TK100A10N1 1: Gate 2: Drain 3: Source TO-220SIS 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage VDSS 100 V Gate-source voltage VGSS ±20 Drain current (DC) (Silicon limit) (Note 1,2) ID 207 A Drain current (DC) (Tc = 25) (Note 1) ID 100 Drain current (pulsed) .
Isc N-Channel MOSFET Transistor INCHANGE Semiconductor TK100A10N1,ITK100A10N1 ·FEATURES ·Low drain-source on-resistanc.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | TK100A06N1 |
Toshiba Semiconductor |
MOSFETs | |
2 | TK100A06N1 |
INCHANGE |
N-Channel MOSFET | |
3 | TK100A08N1 |
Toshiba Semiconductor |
MOSFETs | |
4 | TK100E06N1 |
Toshiba Semiconductor |
Silicon N-Channel MOSFET | |
5 | TK100E06N1 |
INCHANGE |
N-Channel MOSFET | |
6 | TK100E08N1 |
Toshiba Semiconductor |
Silicon N-Channel MOSFET | |
7 | TK100E08N1 |
INCHANGE |
N-Channel MOSFET | |
8 | TK100E10N1 |
Toshiba Semiconductor |
Silicon N-Channel MOSFET | |
9 | TK100E10N1 |
INCHANGE |
N-Channel MOSFET | |
10 | TK100F04K3 |
Toshiba |
Silicon N-Channel MOSFET | |
11 | TK100F04K3L |
Toshiba Semiconductor |
MOSFETs | |
12 | TK100F06K3 |
Toshiba |
Silicon N-Channel MOSFET |