MOSFETs Silicon N-channel MOS (U-MOS) TK100F04K3 1. Applications • Switching Voltage Regulators • DC-DC Converters • Motor Drivers 2. Features (1) AEC-Q101 qualified (2) Low drain-source on-resistance: RDS(ON) = 2.5 mΩ (typ.) (VGS = 10 V) (3) High forward transfer admittance: |Yfs| = 174 S (typ.) (4) Low leakage current: IDSS = 10 µA (max) (VDS = 40 V) (5) .
(1) AEC-Q101 qualified (2) Low drain-source on-resistance: RDS(ON) = 2.5 mΩ (typ.) (VGS = 10 V) (3) High forward transfer admittance: |Yfs| = 174 S (typ.) (4) Low leakage current: IDSS = 10 µA (max) (VDS = 40 V) (5) Enhancement mode: Vth = 3.0 to 4.0 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit TK100F04K3 TO-220SM(W) 1: Gate 2: Drain (Heatsink) 3: Source ©2020 Toshiba Electronic Devices & Storage Corporation 1 Start of commercial production 2008-03 2020-06-12 Rev.2.0 TK100F04K3 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Sym.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | TK100F04K3L |
Toshiba Semiconductor |
MOSFETs | |
2 | TK100F06K3 |
Toshiba |
Silicon N-Channel MOSFET | |
3 | TK100A06N1 |
Toshiba Semiconductor |
MOSFETs | |
4 | TK100A06N1 |
INCHANGE |
N-Channel MOSFET | |
5 | TK100A08N1 |
Toshiba Semiconductor |
MOSFETs | |
6 | TK100A10N1 |
Toshiba |
Silicon N-Channel MOSFET | |
7 | TK100A10N1 |
INCHANGE |
N-Channel MOSFET | |
8 | TK100E06N1 |
Toshiba Semiconductor |
Silicon N-Channel MOSFET | |
9 | TK100E06N1 |
INCHANGE |
N-Channel MOSFET | |
10 | TK100E08N1 |
Toshiba Semiconductor |
Silicon N-Channel MOSFET | |
11 | TK100E08N1 |
INCHANGE |
N-Channel MOSFET | |
12 | TK100E10N1 |
Toshiba Semiconductor |
Silicon N-Channel MOSFET |