TK100A10N1 |
Part Number | TK100A10N1 |
Manufacturer | INCHANGE |
Description | Isc N-Channel MOSFET Transistor INCHANGE Semiconductor TK100A10N1,ITK100A10N1 ·FEATURES ·Low drain-source on-resistance: RDS(ON) = 3.8mΩ (VGS = 10 V) ·Enhancement mode: Vth = 2.0 to 4.0V (VDS = 10 V... |
Features |
·Low drain-source on-resistance: RDS(ON) = 3.8mΩ (VGS = 10 V) ·Enhancement mode: Vth = 2.0 to 4.0V (VDS = 10 V, ID=1.0mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regulators ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 100 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 100 IDM Drain Current-Single Pulsed 362 PD Total Dissipation @TC=25℃ 45 Tj Max. Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A ... |
Document |
TK100A10N1 Data Sheet
PDF 247.32KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
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1 | TK100A10N1 |
Toshiba |
Silicon N-Channel MOSFET | |
2 | TK100A06N1 |
Toshiba Semiconductor |
MOSFETs | |
3 | TK100A06N1 |
INCHANGE |
N-Channel MOSFET | |
4 | TK100A08N1 |
Toshiba Semiconductor |
MOSFETs | |
5 | TK100E06N1 |
Toshiba Semiconductor |
Silicon N-Channel MOSFET |