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TK100A10N1 |
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| Part Number | TK100A10N1 |
| Manufacturer | Toshiba (https://www.toshiba.com/) |
| Description | MOSFETs Silicon N-channel MOS (U-MOS-H) TK100A10N1 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 3.1 mΩ (typ.) (VGS = 10 V) (2) Low leakage ... |
| Features |
(1) Low drain-source on-resistance: RDS(ON) = 3.1 mΩ (typ.) (VGS = 10 V) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 100 V) (3) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1.0 mA)
3. Packaging and Internal Circuit
TK100A10N1
1: Gate 2: Drain 3: Source
TO-220SIS
4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS
100
V
Gate-source voltage
VGSS
±20
Drain current (DC)
(Silicon limit)
(Note 1,2)
ID
207
A
Drain current (DC)
(Tc = 25)
(Note 1)
ID
100
Drain current (pulsed)
... |
| Document |
 TK100A10N1 Data Sheet
PDF 234.01KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | TK100A10N1 |
INCHANGE |
N-Channel MOSFET |
|
| 2 | TK100A06N1 |
Toshiba Semiconductor |
MOSFETs |
|
| 3 | TK100A06N1 |
INCHANGE |
N-Channel MOSFET |
|
| 4 | TK100A08N1 |
Toshiba Semiconductor |
MOSFETs |
|
| 5 | TK100E06N1 |
Toshiba Semiconductor |
Silicon N-Channel MOSFET |
|