This device is a bidirectional triode thyristor (triac) which may be triggered from the off-state to the on-state by either polarity of gate signal with main Terminal 2 at either polarity. ABSOLUTE MAXIMUM RATINGS http://www.DataSheet4U.net/ Symbol VDRM IT(RMS) ITSM ITSM IGM PGM PG(AV) TC Tstg TL Ratings A Repetitive peak off-state voltage (see Note1) Ful.
se temperature range Storage temperature range Lead temperature 1.6 mm from case for 10 seconds Value B D M S N Unit 100 200 400 600 700 800 4 25 30 ± 0.2 1.3 0.3 -40 to +110 -40 to +125 230 V A A A A W W °C °C °C 30/10/2012 COMSET SEMICONDUCTORS 1|4 datasheet pdf - http://www.DataSheet4U.net/ SEMICONDUCTORS TIC206A, TIC206B, TIC206D, TIC206M, TIC206N, TIC206S THERMAL CHARACTERISTICS Symbol R∂JC R∂JA Ratings Junction to case thermal resistance Junction to free air thermal resistance Value ≤ 7.8 ≤ 62.5 Unit °C/W ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol IDR.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | TIC206 |
Power Innovations Limited |
SILICON TRIACS | |
2 | TIC206A |
Comset Semiconductors |
(TIC206x) SILICON BIDIRECTIONAL TRIODE THYRISTOR | |
3 | TIC206B |
Comset Semiconductors |
(TIC206x) SILICON BIDIRECTIONAL TRIODE THYRISTOR | |
4 | TIC206D |
Inchange Semiconductor |
Triacs | |
5 | TIC206D |
Comset Semiconductors |
(TIC206x) SILICON BIDIRECTIONAL TRIODE THYRISTOR | |
6 | TIC206M |
Inchange Semiconductor |
Triacs | |
7 | TIC206M |
Comset Semiconductors |
(TIC206x) SILICON BIDIRECTIONAL TRIODE THYRISTOR | |
8 | TIC206N |
Comset Semiconductors |
(TIC206x) SILICON BIDIRECTIONAL TRIODE THYRISTOR | |
9 | TIC201 |
Power Innovations Limited |
SILICON TRIACS | |
10 | TIC216 |
Power Innovations Limited |
SILICON TRIACS | |
11 | TIC216 |
INCHANGE |
Triac | |
12 | TIC216A |
Comset Semiconductors |
(TIC216x) SILICON TRIACS |