TIC206M - Inchange Semiconductor

TIC206M Triacs

isc Triacs TIC206M FEATURES ·With TO-220 package ·Sensitive Gate Triacs ·Glass Passivated ·Max IGT of 5 mA (Quadrants 1~3) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MIN UNIT VDRM Repetitive peak off-state voltage 600 V VRRM Repetitive.

Features

·With TO-220 package
·Sensitive Gate Triacs
·Glass Passivated
·Max IGT of 5 mA (Quadrants 1~3)
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device performance and reliable operation ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MIN UNIT VDRM Repetitive peak off-state voltage 600 V VRRM Repetitive peak reverse voltage 600 V IT(RMS) RMS on-state current (full sine wave)TC=85℃ 4 A ITSM Non-repetitive peak on-state current 25 A Tj Operating junction temperature 110 ℃ Tstg Storage temperature -45~150 ℃ Rth(j-c) Thermal resistance, junction to case 7..