TIC216 SERIES SILICON TRIACS Copyright © 1997, Power Innovations Limited, UK DECEMBER 1971 - REVISED MARCH 1997 q q q q q Sensitive Gate Triacs 6 A RMS Glass Passivated Wafer 400 V to 800 V Off-State Voltage Max IGT of 5 mA (Quadrants 1 - 3) MT1 MT2 G 1 2 3 TO-220 PACKAGE (TOP VIEW) Pin 2 is in electrical contact with the mounting base. MDC2ACA absolute .
conds IT(RMS) ITSM ITSM IGM PGM PG(AV) TC Tstg TL VDRM SYMBOL VALUE 400 600 700 800 6 60 70 ±1 2.2 0.9 -40 to +110 -40 to +125 230 A A A A W W °C °C °C V UNIT NOTES: 1. These values apply bidirectionally for any value of resistance between the gate and Main Terminal 1. 2. This value applies for 50-Hz full-sine-wave operation with resistive load. Above 70°C derate linearly to 110°C case temperature at the rate of 150 mA/°C. 3. This value applies for one 50-Hz full-sine-wave when the device is operating at (or below) the rated value of on-state current. Surge may be repeated after the device ha.
·Sensitive Gate Triacs ·6A RMS ·Glass passivated Wafer ·400V to 800V off-state Voltage ·Max IGT of 5mA(Quadrants 1-3) ·1.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | TIC216A |
Comset Semiconductors |
(TIC216x) SILICON TRIACS | |
2 | TIC216B |
Comset Semiconductors |
(TIC216x) SILICON TRIACS | |
3 | TIC216D |
Inchange Semiconductor |
Triacs | |
4 | TIC216D |
Bourns |
SILICON TRIACS | |
5 | TIC216D |
Comset Semiconductors |
(TIC216x) SILICON TRIACS | |
6 | TIC216M |
Inchange Semiconductor |
Triacs | |
7 | TIC216M |
Bourns |
SILICON TRIACS | |
8 | TIC216M |
Comset Semiconductors |
(TIC216x) SILICON TRIACS | |
9 | TIC216N |
Bourns |
SILICON TRIACS | |
10 | TIC216N |
Comset Semiconductors |
(TIC216x) SILICON TRIACS | |
11 | TIC216S |
Bourns |
SILICON TRIACS | |
12 | TIC216S |
Comset Semiconductors |
(TIC216x) SILICON TRIACS |