TIC206 SERIES SILICON TRIACS Copyright © 1997, Power Innovations Limited, UK DECEMBER 1971 - REVISED MARCH 1997 q q q q q Sensitive Gate Triacs 4 A RMS Glass Passivated Wafer 400 V to 800 V Off-State Voltage Max IGT of 5 mA (Quadrants 1 - 3) MT1 MT2 G 1 2 3 TO-220 PACKAGE (TOP VIEW) Pin 2 is in electrical contact with the mounting base. MDC2ACA absolute .
conds IT(RMS) ITSM ITSM IGM PGM PG(AV) TC Tstg TL VDRM SYMBOL VALUE 400 600 700 800 4 25 30 ±0.2 1.3 0.3 -40 to +110 -40 to +125 230 A A A A W W °C °C °C V UNIT NOTES: 1. These values apply bidirectionally for any value of resistance between the gate and Main Terminal 1. 2. This value applies for 50-Hz full-sine-wave operation with resistive load. Above 85°C derate linearly to 110°C case temperature at the rate of 160 mA/°C. 3. This value applies for one 50-Hz full-sine-wave when the device is operating at (or below) the rated value of on-state current. Surge may be repeated after the device .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | TIC201 |
Power Innovations Limited |
SILICON TRIACS | |
2 | TIC206A |
Comset Semiconductors |
(TIC206x) SILICON BIDIRECTIONAL TRIODE THYRISTOR | |
3 | TIC206B |
Comset Semiconductors |
(TIC206x) SILICON BIDIRECTIONAL TRIODE THYRISTOR | |
4 | TIC206D |
Inchange Semiconductor |
Triacs | |
5 | TIC206D |
Comset Semiconductors |
(TIC206x) SILICON BIDIRECTIONAL TRIODE THYRISTOR | |
6 | TIC206M |
Inchange Semiconductor |
Triacs | |
7 | TIC206M |
Comset Semiconductors |
(TIC206x) SILICON BIDIRECTIONAL TRIODE THYRISTOR | |
8 | TIC206N |
Comset Semiconductors |
(TIC206x) SILICON BIDIRECTIONAL TRIODE THYRISTOR | |
9 | TIC206S |
Comset Semiconductors |
(TIC206x) SILICON BIDIRECTIONAL TRIODE THYRISTOR | |
10 | TIC216 |
Power Innovations Limited |
SILICON TRIACS | |
11 | TIC216 |
INCHANGE |
Triac | |
12 | TIC216A |
Comset Semiconductors |
(TIC216x) SILICON TRIACS |