TEC9015 - Toshiba

TEC9015 Silicon PNP Transistor

TEC9015 SILICON PNP EPITAXIAL TYPE (PCT PROCESS) AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATKDNS. DRIVER STAGE AMPLIFIER APPLICATIONS. FEATURES 5.1 MAX. Unit. in mm . High Voltage and High Current : VcEO=-50V(Min.), I c =-1 50mA (Max. . Low Noise : NF=0. 7dB(Typ . ) at f=lkHz . Complementary to TEC9014 0.45 . 1 ji 1 0.55 MAX. r 0.45 X i ^.

Features

5.1 MAX. Unit. in mm . High Voltage and High Current : VcEO=-50V(Min.), I c =-1 50mA (Max. . Low Noise : NF=0. 7dB(Typ . ) at f=lkHz . Complementary to TEC9014 0.45 . 1 ji 1 0.55 MAX. r 0.45 X i ^
• 03 a 1 II MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current VCBO VCEO Vebo ic Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range IB PC Tj Tstg U ELECTRICAL CHARACTERISTICS (Ta==25 C) CHARACTERISTIC SYMBOL Collector Cut-off Current ICBO Emitter Cut-off.