TEC9011 - Toshiba

TEC9011 Silicon NPN Transistor

SILICON NPN EPITAXIAL TYPE (PCT PROCESS) TEC9011 FM IF, OSC AND AM CONV, IF AMPLIFIER APPLICATIONS FEATURES . Excellent Noise Figure NF=2.0dB(Typ.) Unit in mm 51 MAX. MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperat.

Features

. Excellent Noise Figure NF=2.0dB(Typ.) Unit in mm 51 MAX. MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range SYMBOL VCBO VCEO VeBO ic IB PC Cstg RATING 50 30 UNIT 50 mA mA 400 mW 150 -55-150 1. EMITTER 2. BASE & COLLECTOR EI AJ TOSHIBA Weight : 0.21g TO-92 SC-43 2-5F1F ELECTRICAL CHARACTERISTICS (Ta=25°C) CHARACTERISTIC SYMBOL Collector Cut-off Current ICBO Emitter Cut-off Current DC Current Gain lEBO hFE (N.