TEC9013 - Toshiba

TEC9013 Silicon NPN Transistor

SILICON NPN EPITAXIAL TYPE (PCT PROCESS) TEC9013 AUDIO POWER AMPLIFIER APPLICATIONS. FEATURES . High hpE = hFE=96-300 . 1 Watts Amplifier Applications . Complementary to TEC9012 Unit in mm 5.1 MAX r^ -i i < s CO r-H 0,45 j|l j 0.55 MAX. s || | "i oo 5 0.45 1 1 MAXIMUM RATINGS (Ta=25 C) CHARACTERISTIC Collector-Base Voltage Collector-Emitte.

Features

. High hpE = hFE=96-300 . 1 Watts Amplifier Applications . Complementary to TEC9012 Unit in mm 5.1 MAX r^ -i i < s CO r-H 0,45 j|l j 0.55 MAX. s || | "i oo 5 0.45 1 1 MAXIMUM RATINGS (Ta=25 C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range SYMBOL VCBO VCEO VEBO ic PC L stg RATING 30 UNIT 800 mA -80 mA 625 mW 150 -55-150 1. EMITTER 2. BASE 3. COLLECTOR EI AT Weight : 0.21g 2-5P1F ELECTRICAL CHARACTERISTICS (Ta=25 C) CHARA.