TEC9014 - Toshiba

TEC9014 Silicon NPN Transistor

SILICON NPN EPITAXIAL TYPE (PCT PROCESS) TEC9014 AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIE R APPLICATIONS. DRIVER STAGE AMPLIFIER APPLICATIONS. FEATURES . High Voltage and High Current : VcEO=50V(Min.), Ic=150mA(Max. . Low Noise : NF=0. 9dB(Typ. ) at f=lkHz . Complementary to TEC9015 Unit in mm 51 MAX. , r^ 0.45 ||| 0.55 MAX. . a45 I 1 Pi X ao 5 CD cs L .

Features

. High Voltage and High Current : VcEO=50V(Min.), Ic=150mA(Max. . Low Noise : NF=0. 9dB(Typ. ) at f=lkHz . Complementary to TEC9015 Unit in mm 51 MAX. , r^ 0.45 ||| 0.55 MAX. . a45 I 1 Pi X ao 5 CD cs L MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Range Collector Power Dissipation Junction Temperature Storage Temperature Range SYMBOL VCBO VcEO VEBO ic IB PC T j T stg ELECTRICAL CHARACTERISTICS (Ta= 25°C) CHARACTERISTIC SYMBOL Collector Cut-off Current ICBO Emitter Cut; -off Current lEBO.