TC58NVG6T2FTA00 - Toshiba

TC58NVG6T2FTA00 64 GBIT (8G X 8 BIT) CMOS NAND E2PROM

The TC58NVG6T2FTA00 is a single 3.3 V 64 Gbit (79,054,700,544 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (8192  1024) bytes  258 pages 4156 blocks. The device has four 9216-byte static registers which allow program and read data to be transferred between the register and the memory cell array in 9216-byt.

Features

 Organization Memory cell array Register Page size Block size
 TC58NVG6T2FTA00 9216  1047.1171875K  8 9216  8 9216 bytes (2064K  258K) bytes Modes Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Multi Page Program, Multi Block Erase, Multi Page Read Mode control Serial input/output Command control Number of valid blocks Min 4000 blocks Max 4156 blocks Power supply VCC  2.7 V to 3.6 V Access time Cell array to register Serial Read Cycle Program/Erase time Auto Page Program Auto Block Erase Operating current Read (25 ns cycle) Program (avg.) Erase (avg.) Standby 110 s max.