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e e h S a at .D w w FEATURES • Organization Memory cell array Register Page size Block size • • TC58NVG1S3B 2112 × 128K × 8 2112 × 8 2112 bytes (128K + 4K) bytes TC58NVG1S8B 1056 × 128K × 16 1056 × 16 1056 words (64K + 2K) words TC58NVG1S3BFT00/TC58NVG1S8BFT00 The TC58NVG1SxB is a single 3.3 V 2 Gbit (2,214,592,512 bits) NAND Electrically Erasable and Prog.
• Organization Memory cell array Register Page size Block size
•
• TC58NVG1S3B 2112 × 128K × 8 2112 × 8 2112 bytes (128K + 4K) bytes TC58NVG1S8B 1056 × 128K × 16 1056 × 16 1056 words (64K + 2K) words
TC58NVG1S3BFT00/TC58NVG1S8BFT00
The TC58NVG1SxB is a single 3.3 V 2 Gbit (2,214,592,512 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes/(1024 + 32) words × 64 pages × 2048 blocks. The device has a 2112-byte/1056-word static register which allow program and read data to be transferred between the register and the memory cell array in.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | TC58NVG1S3EBAI4 |
Toshiba |
2 GBIT (256M x 8-BIT) CMOS NAND E2PROM |
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| 2 | TC58NVG1S3ETA00 |
Toshiba |
2 GBIT (256M x 8 BIT) CMOS NAND E2PROM |
|
| 3 | TC58NVG1S3ETAI0 |
Toshiba |
2 GBIT (256M x 8-BIT) CMOS NAND E2PROM |
|
| 4 | TC58NVG1S3HBAI4 |
Toshiba |
2 GBIT (256M x 8 BIT) CMOS NAND E2PROM |
|
| 5 | TC58NVG1S3HBAI6 |
Toshiba |
2G-BIT (256M x 8 BIT) CMOS NAND E2PROM |
|
| 6 | TC58NVG1S3HTA00 |
Toshiba |
2 GBIT (256M x 8 BIT) CMOS NAND E2PROM |
|
| 7 | TC58NVG1S3HTAI0 |
Toshiba |
2-GBIT (256M x 8 BIT) CMOS NAND E2PROM |
|
| 8 | TC58NVG1S8BFT00 |
Toshiba |
(TC58NVG1S3BFT00) 2 GBit CMOS NAND EPROM |
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| 9 | TC58NVG0S3AFT00 |
Toshiba |
1 GBit CMOS NAND EPROM |
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| 10 | TC58NVG0S3AFT05 |
Toshiba |
1 GBit CMOS NAND EPROM |
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| 11 | TC58NVG0S3ETA00 |
Toshiba |
1 GBIT (128M X 8 BIT) CMOS NAND E2PROM |
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| 12 | TC58NVG0S3HBAI4 |
Toshiba |
1G BIT (128M x 8-BIT) CMOS NAND E2PROM |
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