TC58NVG0S3HTAI0 - Toshiba

TC58NVG0S3HTAI0 1 GBIT (128M x 8 BIT) CMOS NAND E2PROM

The TC58NVG0S3HTAI0 is a single 3.3V 1Gbit (1,140,850,688bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048  128) bytes  64 pages  1024blocks. The device has a 2176-byte static registers which allow program and read data to be transferred between the register and the memory cell array in 2176-byte increment.

Features

 Organization Memory cell array Register Page size Block size x8 2176  64K  8 2176  8 2176 bytes (128K  8K) bytes
 Modes Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy
 Mode control Serial input/output Command control
 Number of valid blocks Min 1004 blocks Max 1024 blocks
 Power supply VCC  2.7V to 3.6V
 Access time Cell array to register 25 s max Serial Read Cycle 25 ns min (CL=50pF)
 Program/Erase time Auto Page Program Auto Block Erase 300 s/page typ. 2.5 ms/block typ.
 Operating current Read (25 ns cycle) Program (avg.) Erase (avg.) Sta.