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TC58NVG0S3HTAI0 |
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| Part Number | TC58NVG0S3HTAI0 |
| Manufacturer | Toshiba (https://www.toshiba.com/) |
| Description | The TC58NVG0S3HTAI0 is a single 3.3V 1Gbit (1,140,850,688bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 128) bytes 64 pages 1024blocks. The d... |
| Features |
Organization Memory cell array Register Page size Block size x8 2176 64K 8 2176 8 2176 bytes (128K 8K) bytes Modes Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy Mode control Serial input/output Command control Number of valid blocks Min 1004 blocks Max 1024 blocks Power supply VCC 2.7V to 3.6V Access time Cell array to register 25 s max Serial Read Cycle 25 ns min (CL=50pF) Program/Erase time Auto Page Program Auto Block Erase 300 s/page typ. 2.5 ms/block typ. Operating current Read (25 ns cycle) Program (avg.) Erase (avg.) Sta... |
| Document |
 TC58NVG0S3HTAI0 Data Sheet
PDF 581.25KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | TC58NVG0S3HTA00 |
Toshiba |
1 GBIT (128M x 8 BIT) CMOS NAND E2PROM |
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| 2 | TC58NVG0S3HBAI4 |
Toshiba |
1G BIT (128M x 8-BIT) CMOS NAND E2PROM |
|
| 3 | TC58NVG0S3HBAI6 |
Toshiba |
1G-BIT (128M x 8 BIT) CMOS NAND E2PROM |
|
| 4 | TC58NVG0S3AFT00 |
Toshiba |
1 GBit CMOS NAND EPROM |
|
| 5 | TC58NVG0S3AFT05 |
Toshiba |
1 GBit CMOS NAND EPROM |
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