The TC58NVG1S3HBAI4 is a single 3.3V 2 Gbit (2,281,701,376 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 128) bytes 64 pages 2048blocks. The device has two 2176-byte static registers which allow program and read data to be transferred between the register and the memory cell array in 2176-byte incre.
Organization
Memory cell array Register Page size Block size
x8 2176 128K 8 2176 8 2176 bytes (128K 8K) bytes
Modes Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy,
Multi Page Program, Multi Block Erase, Multi Page Copy, Multi Page Read
Mode control Serial input/output
Command control
Number of valid blocks Min 2008 blocks Max 2048 blocks
Power supply VCC 2.7V to 3.6V
Access time
Cell array to register 25 s max
Serial Read Cycle
25 ns min (CL=50pF)
Program/Erase time Auto Page Program Auto Block Erase
300 s/page typ. 2.5 ms/block ty.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | TC58NVG1S3HBAI6 |
Toshiba |
2G-BIT (256M x 8 BIT) CMOS NAND E2PROM | |
2 | TC58NVG1S3HTA00 |
Toshiba |
2 GBIT (256M x 8 BIT) CMOS NAND E2PROM | |
3 | TC58NVG1S3HTAI0 |
Toshiba |
2-GBIT (256M x 8 BIT) CMOS NAND E2PROM | |
4 | TC58NVG1S3BFT00 |
Toshiba |
2-GBit CMOS NAND EPROM | |
5 | TC58NVG1S3EBAI4 |
Toshiba |
2 GBIT (256M x 8-BIT) CMOS NAND E2PROM | |
6 | TC58NVG1S3ETA00 |
Toshiba |
2 GBIT (256M x 8 BIT) CMOS NAND E2PROM | |
7 | TC58NVG1S3ETAI0 |
Toshiba |
2 GBIT (256M x 8-BIT) CMOS NAND E2PROM | |
8 | TC58NVG1S8BFT00 |
Toshiba |
(TC58NVG1S3BFT00) 2 GBit CMOS NAND EPROM | |
9 | TC58NVG0S3AFT00 |
Toshiba |
1 GBit CMOS NAND EPROM | |
10 | TC58NVG0S3AFT05 |
Toshiba |
1 GBit CMOS NAND EPROM | |
11 | TC58NVG0S3ETA00 |
Toshiba |
1 GBIT (128M X 8 BIT) CMOS NAND E2PROM | |
12 | TC58NVG0S3HBAI4 |
Toshiba |
1G BIT (128M x 8-BIT) CMOS NAND E2PROM |