SiHLI640G - Vishay

SiHLI640G ower MOSFET

Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-industrial applications. The molding compound used provides a high isolation capability and a .

Features

• Isolated Package
• High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz)
• Sink to Lead Creepage Dist. 4.8 mm
• Logic-Level Gate Drive
• RDS(on) Specified at VGS = 4V and 5 V
• Fast Switching
• Ease of paralleling
• Lead (Pb)-free Available Available RoHS
* COMPLIANT DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-industrial applications. The molding compound us.