SiHL530 - Vishay

SiHL530 Power MOSFET

G G D S S N-Channel MOSFET Third generation Power MOSFETs from Vishay provide the designer with the best combi nation of fast swi tching, ruggedized device design, low on -resistance a nd cost effectiveness. The TO-220AB package is univers ally preferred for all commercial-industrial app lications at powe r dissipation levels to approximately 50 W. The .

Features

100 0.16
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Logic-Level Gate Drive
•R DS(on) Specified at VGS = 4 V and 5 V
• 175 °C Operating Temperature
•F ast Switching
• Ease of Paralleling
• Compliant to RoHS Directive 2002/95/EC Available RoHS
* COMPLIANT TO-220AB DESCRIPTION G G D S S N-Channel MOSFET Third generation Power MOSFETs from Vishay provide the designer with the best combi nation of fast swi tching, ruggedized device design, low on -resistance a nd cost effectiveness. The TO-220AB package is univers ally preferred for all commercial-industrial app lications at pow.