Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package .
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Logic-Level Gate Drive
• RDS(on) Specified at VGS = 4 V and 5 V
• 175 °C Operating Temperature
• Fast Switching
• Ease of Paralleling
• Compliant to RoHS Directive 2002/95/EC
Available
RoHS
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COMPLIANT
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low therma.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SiHL520L |
Vishay |
Power MOSFET | |
2 | SiHL510 |
Vishay Siliconix |
Power MOSFET | |
3 | SiHL510S |
Vishay |
Power MOSFET | |
4 | SiHL530 |
Vishay |
Power MOSFET | |
5 | SIHL530S |
Vishay |
Power MOSFET | |
6 | SiHL540 |
Vishay Siliconix |
Power MOSFET | |
7 | SiHL540S |
Vishay |
Power MOSFET | |
8 | SiHL620 |
Vishay |
Power MOSFET | |
9 | SiHL620S |
Vishay |
Power MOSFET | |
10 | SIHL630 |
Vishay |
Power MOSFET | |
11 | SiHL630S |
Vishay |
Power MOSFET | |
12 | SiHL640 |
Vishay |
Power MOSFET |