Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-industrial applications. The molding compound used provides a high isolation capability and a l.
• Isolated Package
• High Voltage Isolation = 2.5 kVRMS (t = 60 s; Available
f = 60 Hz)
RoHS
*
• Sink to Lead Creepage Dist. = 4.8 mm
COMPLIANT
• Logic-Level Gate Drive
• RDS(on) Specified at VGS = 4 V and 5 V
• Fast Switching
• Ease of paralleling
• Lead (Pb)-free Available
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-industrial applications. The molding .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SIHLI520G |
Vishay |
Power MOSFET | |
2 | SIHLI540G |
Vishay |
Power MOSFET | |
3 | SiHLI640G |
Vishay |
ower MOSFET | |
4 | SiHLIZ14G |
Vishay Siliconix |
Power MOSFET | |
5 | SIHLIZ24G |
Vishay |
Power MOSFET | |
6 | SiHLIZ34G |
Vishay |
Power MOSFET | |
7 | SiHLIZ44G |
Vishay |
Power MOSFET | |
8 | SiHL510 |
Vishay Siliconix |
Power MOSFET | |
9 | SiHL510S |
Vishay |
Power MOSFET | |
10 | SiHL520 |
Vishay |
Power MOSFET | |
11 | SiHL520L |
Vishay |
Power MOSFET | |
12 | SiHL530 |
Vishay |
Power MOSFET |