SiHG21N80AEF - Vishay

SiHG21N80AEF Power MOSFET

www.vishay.com SiHG21N80AEF Vishay Siliconix EF Series Power MOSFET With Fast Body Diode D TO-247AC S D G G S N-Channel MOSFET PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) typ. (Ω) at 25 °C Qg max. (nC) Qgs (nC) Qgd (nC) Configuration 850 VGS = 10 V 71 10 21 Single 0.220 FEATURES • Low figure-of-merit (FOM) Ron x Qg • Low effective capacitance (Co(er).

Features

• Low figure-of-merit (FOM) Ron x Qg
• Low effective capacitance (Co(er))
• Reduced switching and conduction losses
• Avalanche energy rated (UIS)
• Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS
• Server and telecom power supplies
• Switch mode power supplies (SMPS)
• Power factor correction power supplies (PFC)
• Lighting - High-intensity discharge (HID) - Fluorescent ballast lighting
• Industrial - Welding - Induction heating - Motor drives - Battery chargers - Solar (PV inverters) ORDERING INFORMATION Package Lead (Pb)-free and halo.