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SIHG24N65E - Vishay Siliconix

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SIHG24N65E Power MOSFET

www.vishay.com SiHG24N65E Vishay Siliconix E Series Power MOSFET PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) max. at 25 °C (Ω) Qg max. (nC) Qgs (nC) Qgd (nC) Configuration 700 VGS = 10 V 122 21 37 Single 0.145 TO-247AC D S D G G S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free Lead (Pb)-free and Halogen-free FEATURES • Low figure-of.

Features


• Low figure-of-merit (FOM) Ron x Qg
• Low input capacitance (Ciss)
• Reduced switching and conduction losses
• Ultra low gate charge (Qg)
• Avalanche energy rated (UIS) Available
• Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS
• Server and telecom power supplies
• Switch mode power supplies (SMPS)
• Power factor correction power supplies (PFC)
• Lighting - High-intensity discharge (HID) - Fluorescent ballast lighting
• Industrial - Welding - Induction heating - Motor drives - Battery chargers - Renewable energy - Solar (PV invert.

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