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www.vishay.com SiHG22N60AE Vishay Siliconix E Series Power MOSFET PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) typ. () at 25 °C Qg max. (nC) Qgs (nC) Qgd (nC) Configuration 650 VGS = 10 V 96 12 25 Single 0.156 TO-247AC S D G D G S N-Channel MOSFET FEATURES • Low figure-of-merit (FOM) Ron x Qg • Low input capacitance (Ciss) • Reduced switching and con.
• Low figure-of-merit (FOM) Ron x Qg
• Low input capacitance (Ciss)
• Reduced switching and conduction losses
• Ultra low gate charge (Qg)
• Avalanche energy rated (UIS)
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
• Server and telecom power supplies
• Switch mode power supplies (SMPS)
• Power factor correction power supplies (PFC)
• Lighting
- High-intensity discharge (HID) - Fluorescent ballast lighting
• Industrial - Welding - Induction heating - Motor drives - Battery chargers - Renewable energy - Solar (PV inverters)
ORDERING I.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | SIHG22N60E |
Vishay Siliconix |
Power MOSFET |
|
| 2 | SIHG22N60S-E3 |
Vishay Siliconix |
(SIHG22N60S-E3 / SIHG47N60S-E3) Power MOSFET |
|
| 3 | SIHG20N50C |
Vishay Siliconix |
Power MOSFET |
|
| 4 | SIHG20N50C |
INCHANGE |
N-Channel MOSFET |
|
| 5 | SiHG20N50E |
Vishay |
Power MOSFET |
|
| 6 | SiHG21N60EF |
Vishay |
Power MOSFET |
|
| 7 | SiHG21N65EF |
Vishay |
Power MOSFET |
|
| 8 | SiHG21N80AEF |
Vishay |
Power MOSFET |
|
| 9 | SIHG24N65E |
Vishay Siliconix |
Power MOSFET |
|
| 10 | SIHG24N65EF |
Vishay |
Power MOSFET |
|
| 11 | SiHG24N80AEF |
Vishay |
Power MOSFET |
|
| 12 | SIHG25N40D |
Vishay Siliconix |
Power MOSFET |
|