SiHG21N60EF - Vishay

SiHG21N60EF Power MOSFET

www.vishay.com SiHG21N60EF Vishay Siliconix EF Series Power MOSFET with Fast Body Diode PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) max. at 25 °C () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 650 VGS = 10 V 84 14 24 Single TO-247AC 0.176 D S D G G S N-Channel MOSFET FEATURES • Fast body diode MOSFET using E series technology • Reduced trr, Qrr,.

Features

• Fast body diode MOSFET using E series technology
• Reduced trr, Qrr, and IRRM
• Low figure-of-merit (FOM): Ron x Qg
• Low input capacitance (Ciss)
• Increased robustness due to low Qrr
• Ultra low gate charge (Qg)
• Avalanche energy rated (UIS)
• Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS
• Telecommunications - Server and telecom power supplies
• Lighting - High intensity discharge (HID) - Light emitting diodes (LEDs)
• Consumer and computing - ATX power supplies
• Industrial - Welding - Battery chargers
• Renewable energy - Solar .