Si4542DY Vishay Siliconix N- and P-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) N-Channel 30 0.025 at VGS = 10 V 0.035 at VGS = 4.5 V P-Channel - 30 0.032 at VGS = - 10 V 0.045 at VGS = - 4.5 V ID (A) 6.9 5.8 - 6.1 - 5.1 FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % Rg Tested • Co.
• Halogen-free According to IEC 61249-2-21 Definition
• TrenchFET® Power MOSFET
• 100 % Rg Tested
• Compliant to RoHS Directive 2002/95/EC
S1 1 G1 2 S2 3 G2 4
SO-8 Top View
8 D1 7 D1 6 D2 5 D2
Ordering Information: Si4542DY-T1-E3 (Lead (Pb)-free) Si4542DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
D1 S2
G2 G1
S1 N-Channel MOSFET
D2 P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
N-Channel
P-Channel
Drain-Source Voltage
VDS 30 - 30
Gate-Source Voltage
VGS ± 20 ± 20
Continuous Drain Current (TJ = 150 °C)a
TA = 25 °C TA = 70 °C
ID
6.
This complementary MOSFET device is produced using Fairchild’s advanced PowerTrench process that has been especially tai.
Features This complementary MOSFET device is produced using ON Semiconductor’s advanced PowerTrench process that has b.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | Si4544DY |
Vishay |
N- and P-Channel 30-V (D-S) MOSFET | |
2 | SI4500BDY |
Vishay Siliconix |
Complementary MOSFET | |
3 | SI4500DY |
Vishay Siliconix |
Complementary MOSFET | |
4 | SI4501ADY |
Vishay Siliconix |
Complementary MOSFET | |
5 | SI4501BD |
Vishay |
MOSFET | |
6 | Si4501BDY |
Vishay |
Complementary (N- and P-Channel) MOSFET | |
7 | SI4501DY |
Vishay Siliconix |
Complementary MOSFET | |
8 | SI4505DY |
Vishay Siliconix |
MOSFET | |
9 | SI4511DY |
Vishay Siliconix |
MOSFET | |
10 | Si4532ADY |
Vishay |
N- and P-Channel MOSFET | |
11 | SI4532CDY |
Vishay |
MOSFET | |
12 | SI4532DY |
Vishay Siliconix |
N- and P-Channel 30-V MOSFET |