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Si4542DY |
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| Part Number | Si4542DY |
| Manufacturer | Fairchild Semiconductor |
| Description | This complementary MOSFET device is produced using Fairchild’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for s... |
| Features |
• Q1: N-Channel 6 A, 30 V RDS(on) = 28 mΩ @ VGS = 10V RDS(on) = 35 mΩ @ VGS = 4.5V • Q2: P-Channel –6 A, –30 V RDS(on) = 32 mΩ @ VGS = –10V RDS(on) = 45 mΩ @ VGS = –4.5V DD2 DD2 DD1 DD1 SO-8 Pin 1 SO-8 G2 S2 G G1 S1 S S S Q2 5 6 Q1 7 8 4 3 2 1 Absolute Maximum Ratings TA = 25°C unless otherwise noted Symbol Parameter VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed Power Dissipation for Dual Operation Power Dissipation for Single Operation (Note 1a) (Note 1a) (Note 1b) (Note 1c) Operating and Storage Junc... |
| Document |
 Si4542DY Data Sheet
PDF 50.52KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | Si4542DY |
ON Semiconductor |
30V Complementary PowerTrench MOSFET |
|
| 2 | Si4542DY |
Vishay |
N- and P-Channel 30-V MOSFET |
|
| 3 | Si4544DY |
Vishay |
N- and P-Channel 30-V (D-S) MOSFET |
|
| 4 | SI4500BDY |
Vishay Siliconix |
Complementary MOSFET |
|
| 5 | SI4500DY |
Vishay Siliconix |
Complementary MOSFET |
|