Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
These P-channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. Top View The TSOP-6 package with its customized leadframe produces a HEXFET® power.
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Si3443DV - ON Semiconductor
This P-Channel 2.5V specified MOSFET is produced using Fairchild's advanced PowerTrench process that has been especially.
Si3443DV - Vishay
P-Channel 2.5-V (G-S) MOSFET Si3443DV Vishay Siliconix PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.065 @ VGS = –4.5 V –20.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | SI3443DDV |
Vishay |
MOSFET |
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| 2 | SI3443DVPBF |
International Rectifier |
Power MOSFET |
|
| 3 | Si3443BDV |
Vishay |
P-Channel 2.5-V (G-S) MOSFET |
|
| 4 | Si3443BDV |
Freescale |
P-Channel 20-V (D-S) MOSFET |
|
| 5 | Si3443CDV |
Vishay |
P-Channel 20 V (D-S) MOSFET |
|
| 6 | SI3442BDV |
Vishay Siliconix |
N-Channel 2.5-V (G-S) MOSFET |
|
| 7 | Si3442CDV |
Vishay |
N-Channel MOSFET |
|
| 8 | SI3445ADV |
Vishay Siliconix |
P-Channel 1.8-V (G-S) MOSFET |
|
| 9 | SI3447BDV |
Vishay Siliconix |
P-Channel 12-V (D-S) MOSFET |
|
| 10 | SI3400 |
Silicon Laboratories |
FULLY-INTEGRATED 802.3-COMPLIANT PD INTERFACE AND SWITCHING REGULATOR |
|
| 11 | SI3400A |
MCC |
N-Channel MOSFET |
|
| 12 | SI3401 |
Silicon Laboratories |
FULLY-INTEGRATED 802.3-COMPLIANT PD INTERFACE AND SWITCHING REGULATOR |
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