SI3443DDV - Vishay

SI3443DDV MOSFET

www.vishay.com Si3443DDV Vishay Siliconix P-Channel 20 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) -20 RDS(on) (Ω) MAX. 0.047 at VGS = -4.5 V 0.080 at VGS = -2.7 V 0.090 at VGS = -2.5 V TSOP-6 Single S 4 D 5 D 6 ID (A) a, e -4 -4 -4 Qg (TYP.) 9 nC 1 D Top View 2 D 3 G Marking Code: BN Ordering Information: Si3443DDV-T1-GE3 (Lead (Pb)-free and Halogen.

Features

• TrenchFET® power MOSFET
• PWM optimized
• 100 % Rg tested
• Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS
• Hard disk drives
• DC/DC converter
• Load switch
• Portable devices (3) G (4) S (1, 2, 5, 6) D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current (t = 300 μs) TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C TC = .