SI3442BDV - Vishay Siliconix

SI3442BDV N-Channel 2.5-V (G-S) MOSFET

Si3442BDV Vishay Siliconix N-Channel 2.5-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) 0.057 @ VGS = 4.5 V 0.090 @ VGS = 2.5 V ID (A) 4.2 3.4 TSOP-6 Top View 1 3 mm 6 5 (3) G 4 (1, 2, 5, 6) D 2 3 2.85 mm (4) S N-Channel MOSFET Ordering Information: Si3442BDV-T1—E3 Marking Code: 2Bxxx ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOT.

Features

ttp://www.vishay.com/www/product/spice.htm Document Number: 72504 S-40424—Rev. C, 15-Mar-04 www.vishay.com t v 5 sec Steady State Steady State Symbol RthJA RthJF Typical 75 120 70 Maximum 100 145 85 Unit _C/W 1 Si3442BDV Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta On-State Drain Currenta Drain Source On-State Drain-Source On State Resistancea Forward Transconductancea Diode Forward Voltagea VGS(th) IGSS IDSS ID(on) D( ) VDS = VGS, ID = 250 mA VDS = 0 .