Si3442CDV Vishay Siliconix N-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) () Max. 0.027 at VGS = 10 V 0.030 at VGS = 4.5 V 0.049 at VGS = 2.5 V TSOP-6 Top View D 1 6 D ID (A) 8d 7.5 6.1 a Qg (Typ.) 4.3 nC • TrenchFET® Power MOSFET • 100 % Rg and UIS Tested • Material categorization: For definitions of compliance please see www..
PRODUCT SUMMARY
VDS (V) 20 RDS(on) () Max. 0.027 at VGS = 10 V 0.030 at VGS = 4.5 V 0.049 at VGS = 2.5 V
TSOP-6 Top View
D 1 6 D
ID (A) 8d 7.5 6.1
a
Qg (Typ.) 4.3 nC
• TrenchFET® Power MOSFET
• 100 % Rg and UIS Tested
• Material categorization: For definitions of compliance please see www.vishay.com/doc?99912
APPLICATIONS
• DC/DC Converters
• Boost Converters
• Load Switch
D (1, 2, 5, 6)
3 mm D 2 5 D Marking Code BE G 3 2.85 mm 4 S XXX Lot Traceability and Date Code Part # Code
G (3) (4)
Ordering Information: Si3442CDV-T1-GE3 (Lead (Pb)-free and Halogen-free)
S
N-Channel MOSFET
ABSOL.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SI3442BDV |
Vishay Siliconix |
N-Channel 2.5-V (G-S) MOSFET | |
2 | Si3443BDV |
Vishay |
P-Channel 2.5-V (G-S) MOSFET | |
3 | Si3443BDV |
Freescale |
P-Channel 20-V (D-S) MOSFET | |
4 | Si3443CDV |
Vishay |
P-Channel 20 V (D-S) MOSFET | |
5 | SI3443DDV |
Vishay |
MOSFET | |
6 | SI3443DV |
International Rectifier |
Power MOSFET | |
7 | SI3443DV |
Vishay |
MOSFET | |
8 | Si3443DV |
ON Semiconductor |
P-Channel MOSFET | |
9 | SI3443DVPBF |
International Rectifier |
Power MOSFET | |
10 | SI3445ADV |
Vishay Siliconix |
P-Channel 1.8-V (G-S) MOSFET | |
11 | SI3447BDV |
Vishay Siliconix |
P-Channel 12-V (D-S) MOSFET | |
12 | SI3400 |
Silicon Laboratories |
FULLY-INTEGRATED 802.3-COMPLIANT PD INTERFACE AND SWITCHING REGULATOR |