SW6N90 - SEMIPOWER

SW6N90 N-channel TO-262 MOSFET

This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. It is mainly suitable for half bridge or full bridge resonant topology like a electronic ballast, and al.

Features

■ High ruggedness
■ RDS(ON) (Max 2.3 Ω)@VGS=10V
■ Gate Charge (Typical 40nC)
■ Improved dv/dt Capability
■ 100% Avalanche Tested 1 2 BVDSS : 900V ID : 6.0A RDS(ON) : 2.3ohm 2 3 1. Gate 2. Drain 3. Source General Description This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. It is mainly suitable for half bridge or full bridge resonant topology like a electronic ballast, and also low power.